Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 10 Issue 7
- /
- Pages.645-650
- /
- 1997
- /
- 2982-6268(pISSN)
- /
- 2982-6306(eISSN)
A Behavior of the Wet Etching of CoNbZr/Cu/CoNbZr Multi-Layer Films
CoNbZr/Cu/CoNbZr 다층막의 습식 식각 거동
Abstract
We manufactured CoNbZr/Cu/CoNbZr multi-layer films by rf magnetron sputtering methods and formed the patterns on the deposited multi-layer films. In this study, we fabricated a new etchant for forming the patterns by the wet etching with etchant and we searched for the best etching conditions and the etchant composition. Cu was etched selectively independent on the concentration of iron chloride solution, but amorphous CoNbZr thin film did not. The etchant was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec, which etched CoNbZr/Cu/CoNbZr multi-layer films at the same time. Also, the etchant etched CoNbZr/Cu/CoNbZr multi-layer films by the three-step. It was shown that the cross-section had the isotropic structure and excellent etching characteristics with the above etchant.
Keywords