DRAM과 그 재료의 향후 발전 방향

  • 이대훈 (현대전자산업(주) 메모리 연구소)
  • Published : 1997.06.01

Abstract

Keywords

References

  1. Technical Digest of International Solid-State Circuits Conference A Single-Electron-Memory Integrated Circuit for Giga-to-Tera Bit Storage K.Yano(et al.)
  2. Technical Digest of Symposium on VLSI Technology A Vertical f-Shape Transistor (VfT) Cell for 1Gbit DRAM and Beyond S. Maeda(et al.)
  3. Technical Digest of International Solid-State Circuit Conference One-Transistor-Cell Multi-Valued CAM for a Collision Detection VLSI Processor T.Hanyu(et al.)