References
- High-Power GaAs FET Amplifier John L. B. Walker
- IEEE Trans. on Electron Devices A Theoretical Analysis and Experimental Confirmation of the Optimally Loaded and Overdriven RF Power Amplifier David M. Snider
- IEICE Transactions v.E74 High Efficiency Transmitting Power Amplifiers for Portable Radio Units T. Nojima;S. Nishiki;K. Chiba
- IEEE MTT-S International Microwave Symposium Digest High Efficiency Harmonic Control Amplifier B. Ingruber;W. Pritzl;G. Magerl
- IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest An Investigation of IM3 Distortion in Relation to Bypass Capacitor of GaAs MMIC's H. Kawasaki;T. Ohgihara;Y. Murakami
- IEEE Trans. on MTT Quasi-Linear Amplification Using Self Phase Distortion Compensation Technique H. Hayashi;M. Nakatsugawa;M. Muraguchi
- Microwave Journal An Amplitude and Phase Linearizing Technique for Linear Power Amplifiers M. Nakayama;K. Mori;K. Yamauchi;Y. Itoh;Y. Mitsui
- IEEE MTT-S International Microwave Symposium Digest A Novel Series Diode Linearizer for Mobile Radio Power Amplifiers K. Yamauchi;K. Mori;M. Nakayama;Y. Itoh;Y. Mitsui;O. Ishida
- Asia Pacific Microwave Conference Digest High Efficiency Linear Amplifiers Using Source Second-Harmonic Control for Digital Cellular Phones M. Nakamura;M. Maeda;H. Takehara;H. Masato;S. Morimoto;Y. Ota
- IEEE MTT-S International Microwave Symposium Digest A Low Third Order Intermodulation Amplifier with Harmonic Feedback Circuitry M. R. Moazzam;C. S. Aitchison
- IEEE MTT-S International Microwave Symposium Digest A Highly Linear MESFET S. L. G. Chu;J. Hung;W. Struble;G. Jackson;N. Pan;M. J. Schindler;Y. Tajima
- IEEE IEDM High Power AlGaAs/GaAs HBTs and Their Application to Mobile Communications Systems T. Yoshimasu
- IEEE Trans. on MTT Intermodulation in Heterojunction Bipolar Transistors S. A. Mass;B. L. Nelson;D. L. Tait
- IEEE MTT-S International Microwave Symposium Digest Design Study of Linearized AlGaAs/GaAs HBTs Using Volterra Series Joonwoo Lee;Woonyun Kim;Youngsik Kim;Tae Moon Roh;Bumman Kim
- IEEE MTT-S Internat-ional Microwave Symposium Digest Pseudomorphic Power HEMT with 53.5 % Power-Added Efficiency for 1.9 GHz PHS Standards H. Ono;Y. Umemoto;M. Mori;M. Miyazaki;A. Terano;M. Kudo
- IEEE IEDM 1.5 V Operation GaAs Spikegate Power FET with 65 % Power-added Efficiency T. Tanaka;H. Furukawa;H. Takenaka;T. Ueda;A. Noma;T. Fukui;K. Tateoka;D. Ueda
- IEEE IEDM 1.2 V Operation 1.1 W Heterojunction FET for Portable Radio Applications K. Inosako;N. Iwata;M. Kuzuhara