Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Electrical and Optical proper ties of Sno$_2$:sb thin Films Using Reactive DC Suttering

반응성 DC sputtering으로 제작한 Sno$_2$:Sb 박막의 전기적.광학적 특성

  • Jung H. W. (Department of Electrical Engineering, Inha University) ;
  • Lee, C. (Department of Electrical Engineering, Inha University) ;
  • Shin, J. H. (Inorganic Chemistry Division, NITQ) ;
  • Song, K. H. (Inorganic Chemistry Division, NITQ) ;
  • Sin, Seong-Ho (Inorganic Chemistry Division, NITQ) ;
  • Park, J. I. (Inorganic Chemistry Division, NITQ) ;
  • Park, K. J. (Inorganic Chemistry Division, NITQ)
  • 정해원 (인하대학교 전기공학과) ;
  • 이천 (인하대학교 전기공학과) ;
  • 신재혁 (국립기술품질원 무기화학과) ;
  • 송국현 (국립기술품질원 무기화학과) ;
  • 신성호 (국립기술품질원 무기화학과) ;
  • 박정일 (국립기술품질원 무기화학과) ;
  • 박광자 (국립기술품질원 무기화학과)
  • Published : 1997.12.01
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Abstract

Transparent conductive thin films have found many applications in active and passive electronic and opto-electronic devices such as flat panel display electrode, solar cell electrode and window heat mirror, etc. Low resistivity and high transmittance of these films can beotained by controlling deposition parameters which are oxygen partial pressure, substrate temperature and dopant concentration. In this study, non-stoichiometric and Sb-doped thin electrical properties of undoped films have been degraded with increase of substrate temperature and optical properties have been improved in Sb-doped films. The resistivity of $2.5\times10^{-3}\Omega\textrm{cm}$,/TEX>, average transmittance of 80% and sheet resistance of 130$\Omega$/$\square$ at thickess of 2000 $\AA$ could be obrained at optmal condimal conditions which were at $400^{\circ}C$ of substrate temperature, 58% of oxygen partial pressure and 5% of Sb doping concentration.

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