Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 6 Issue S1
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- Pages.59-65
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- 1997
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- 1225-8822(pISSN)
Si(100) ETCHING BY THERMAL-ENERGY HYDROGEN ATOMS
- Kang, Joo-Hyun (Department of Chemistry, Kyung Won University) ;
- Jo, Sam-Keun (Department of Chemistry, Kyung Won University) ;
- John G. Ekerdt (Department of Chemical Engineering and Science and Technology Center University of Texas Austin)
- Published : 1997.10.01
Abstract
Efficient Si(100) etching by thermal H atoms at low substrate temperatures has been achieved. Gas-phase etching product
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