Journal of Korean Vacuum Science & Technology
- 제1권1호
- /
- Pages.38-44
- /
- 1997
- /
- 1226-6167(pISSN)
Single source CVD of epitaxial 3C-SiC on Si(111) without carbonization
- Lee, Kyung-Won (Thin Film Materials laboratory, Advanced materilas Division, Korea Research Institute of Chemical Technology) ;
- Yu, Kyu-Sang (Thin Film Materials laboratory, Advanced materilas Division, Korea Research Institute of Chemical Technology) ;
- Bae, Jung-Wook (Thin Film Materials laboratory, Advanced materilas Division, Korea Research Institute of Chemical Technology) ;
- Kim, Yun-Soo (Thin Film Materials laboratory, Advanced materilas Division, Korea Research Institute of Chemical Technology)
- 발행 : 1997.06.01
초록
Epitaxial growth of SiC films on Si(111) substrates without carbonization was carried out n the temperature range of 900-100
키워드