A 10-Gbit/s Limiting Amplifier Using AlGaAs/GaAs HBTs

  • Park, Sung-Ho (Semiconductor Research Division, Electronics and Telecommunications Research Institute) ;
  • Lee, Tae-Woo (Semiconductor Research Division, Electronics and Telecommunications Research Institute) ;
  • Kim, Yeong-Seuk (School of Electrical and Electronic Engineering, Chungbuk University) ;
  • Kim, Il-Ho (Semiconductor Research Division, Electronics and Telecommunications Research Institute) ;
  • Park, Moon-Pyung (Semiconductor Research Division, Electronics and Telecommunications Research Institute)
  • Published : 1997.12.01

Abstract

To realize 10-Gbit/s optical transmission systems, we designed and fabricated a limiting amplifier with extremely high operation frequencies over 10-GHz using AlGaAs/GaAs heterojunction bipolar transistors (HBTs), and investigated their performances. Circuit design and simulation were performed using SPICE and LABRA. A discrete AlGaAs/GaAs HBT with the emitter area of 1.5${\times}$10$\mu\textrm{m}$$^2$, used for the circuit fabrication, exhibited the cutoff frequency of 63GHz and maximum oscillation frequency of 50GHz. After fabrication of MMICs, we observed the very wide bandwidth of DC∼15GHz for a limiting amplifier from the on-wafer measurement. Ceramic-packaged limiting amplifier showed the excellent eye opening, the output voltage swing of 750mV\ulcorner, and the rise/fall time of 40ps, measured at the data rates of 10-Gbit/s.

Keywords

References

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