$Al_xGa_{1-x}Sb$의 결정성장과 특성에 관한 연구

A study on the characteristics and growth $Al_xGa_{1-x}Sb$

  • 이재구 (삼성전자 반도체 사업부) ;
  • 박민서 (광운대학교 전자재료공학과 신기술연구소) ;
  • 정성훈 (광운대학교 전자재료공학과 신기술연구소) ;
  • 송복식 (광운대학교 전자재료공학과 신기술연구소) ;
  • 문동찬 (광운대학교 전자재료공학과 신기술연구소) ;
  • 김선태 (대전산업대학교 재료공학과)
  • 발행 : 1997.03.01

초록

Ternary semiconductor $Al_{x}$G $a_{1-x}$ Sb crystals which have energy gap of 0.7eV-1.6 eV at room temperature according to the composition ratios were grown by the vertical Bridgman method. The characteristics of the crystals were investigated by XRD, HRTEM and Hall effect. The lattice constants of $Al_{x}$G $a_{1-x}$ Sb crystals were varied from 6.096A over .deg. to 6.135A over .deg. with the composition ratio x. The Hall effect of the $Al_{x}$G $a_{1-x}$ Sb crystals were measured by van der Pauw method with the magnetic field of 3 kilogauss at room temperature. The resistivities of Te-doped $Al_{x}$G $a_{1-x}$ Sb crystals were increased from 0.071 to 5 .OMEGA.-cm at room temperature according to the increment of the composition ratio x. The mobilies of $Al_{x}$G $a_{1-x}$ Sb crystals varied with the composition ratio x resulted in the following three different regions of GaSb-like (0.leq.x.leq.0.3), intermediate (0.3.leq.x.leq.0.4) and AlSb-like (0.4.leq.x.leq.l).q.l).q.l).q.l).

키워드