The Effects of Deposition Rates on Exchange Coupling and Magnetoresistance in NiO Spin-Valve Films

  • D. G. Hwang (SangJi University) ;
  • Park, C. M. (Dankook University) ;
  • Lee, S. S. (SangJi University) ;
  • Lee, K. A. (Dankook University)
  • 발행 : 1997.12.01

초록

The effects of deposition rate on exchange coupling field Hex and coercive field Hc in NiO spin-valves are discussed. The Hex and Hc increased with deposition rate of NiO film. The rms roughnesses of the NiO deposited at 6 ${\AA}$/min (NiO-Low) and 30${\AA}$/min (NiO-High) were almost similar, however, the short-range roughness increased with the deposition rate. The Hex, Hc and surface morphologies for the modulated NiO spin-valve films such as NiO-Low\NiO-High\NiO-Low and NiO-High\NiO-Low were investigated.

키워드

참고문헌

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