The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
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X-ray and Plasma Process Induced Damages to PLZT Capacitor Characteristics for DRAM Applications

  • Kim, Jiyoung (School of Metallurgical & Materials Engineering, Kookmin University)
  • Published : 1997.09.01
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Abstract

In this paper, the imparct of X-ray and plasma process-induced-damages to La doped Lead Zirconate Titanate (PLZT, (Pb1-xLa)(Zr0.5Ti0.5)O3) capacitor characteristics have been investigated from the viewpoint of gigabit scale dynamic random access memory (DRAM) applications. Plamsa damage causes asymmetric degradation on hysteresis characteristics of PLZT films. On the other hand, X-ray damage results in a symmetrical reduction of charge storage densities (Qc's) for both polarities. As La concentration increases in the films, the radiation hardness of PLZT films on X-ray and plasma exposures is improved. It is observed that the damaged devices are fully recovered by thermal annealing under oxygen ambient.

Keywords

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