Study on the physical mechanism of nonlinear gain in semiconductor lasers

반도체 레이저의 비선형 이득의 물리적인 매카니즘에 관한 연구

The dominant physical process repsonsible for the nonlinear gain is from spectral-hole burning with the time constant fo about 50fs and the contribution to the nonlinea rgain form hot carriers effect is determined to be about 15% of the contribution due to spectral-hole burning. To prove the above results we fit the data of hall and found that hot carriers have a profound effect on their experimental data despite the fact that the magnitude of hot carriers effect is only 15% of spectral-hole burning. We suggest that the experimenta with a pump pulse width of 180 fs is very sensitive in detecting the effect of hot carriers, but is not sensitive in detecting much faster process associated with spectral-hole burning.