Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The Fabrication and Electrical Characteristics of Planar Multi-Quantum well (MQW) Avalanche, MQW-pn, and p-i-n Photodiode Implantd with Oxygen for Electrical Isolation

Oxygen 이온 주입의 전기적 고립을 통한 평면형 다중 양자 우물 구조의 애벌런치 & pn 및 p - i- n광 다이오드의 제작 및 전기적 특성

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  • D.Sivco (Bell Laboratories. Lucent Technologies Murray Hill, NJ. 07974, USA) ;
  • D.L.Jacobsen (Bell Laboratories. Lucent Technologies Murray Hill, NJ. 07974, USA) ;
  • A.Y.cho (Bell Laboratories. Lucent Technologies Murray Hill, NJ. 07974, USA)
  • 시상기 (서울대학교 전기공학부) ;
  • 김성준 (서울대학교 전기공학부) ;
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  • Published : 1997.09.01
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Abstract

The dependence of the electrical properties in planar MQW - APD & pn, and p - i - n photodiode implanted with oxygen on the annealing emperatures and ion dose has been investigated. The oxygen implantation was performed for inter-device isolation. The leakage current of as-impanted p-i-n photodiode obtained was less than 50 nA. An annelaing temperature dependence study shows an abrupt increase of leakge current at 600.deg.C for all devices under study. This indicates that donor complex centers introduced by the chemical activity of oxygen increase with increasing annelaing temperatures. Furthermore, leakage current was highly correlated with oxygen dose due to th eimplanted related defects.

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