Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Utilities of Parylene buffer layer in H:LiNbO$_{3}$ optical modulator

H:LiNbO$_{3}$ 광변조기에서 Parylene 버퍼층의 유용성

  • Huh, Hyun (Dept. of Elec. Engineering, Chonbuk Nat'l Univ.) ;
  • Pan, Jae-Kyung (Dept. of Elec. Engineering, Chonbuk Nat'l Univ.)
  • 허현 (전북대학교 전기공학과) ;
  • 반재경 (전북대학교 전기공학과)
  • Published : 1997.08.01
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Abstract

H:LiNbO$_{3}$ optical modulator buffered by parylene layer, which has a merits in the bandwidth, power consumption and fabrication as compared with conventional SiO$_{2}$ buffered optical modulator, is proposed and analyzed. The dependences of velocity matching condition, charcteristics impedance, and driving voltage on dielectric constants, thickness of buffer layer, and electrode configurations are demonstrated with finite element calculation. And we performed the physical and chemical test of parylene buffer layer deposited on LiNbO$_{3}$ and under Au electrodes.

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