A study on the V and X shpe defects in I $n_{0.53}$GaTEX>$_{0.47}$As/InTEX>$_{0.52}$AlTEX>$_{0.48}$As/InP P-HEMT structure grown by molecular beam epitaxy method

分子線에피택셜 方法으로 成長한 I $n_{0.53}$GaTEX>$_{0.47}$As/InTEX>$_{0.52}$AlTEX>$_{0.48}$As/InP P-HEMT 構造內의 V 및 X字形 缺陷에 關한 硏究

I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A $l_{0.48}$As pseudomorphic high electron mobility transistor (P-HEMT) structures were grown on semi-insulating InP substrates by molecular beam epitzxy method. The hall effect measuremetn was used to measure the electrical properties and the photoluminescence (PL) measurement was used to measure the electrical properties and the photoluminescence(PL) measurement for optical propety. By the cross-sectional transmission electron microscopy (XTEM) investigation of the V and X shape defects including slip with angle of 60.deg. C and 120.deg. C to surface in the sampel, the defects formation mecahnism in the I $n_{0.52}$A $l_{0.48}$As epilayers on InP substrates could be explained with the different thermal expansion coefficients between I $n_{0.52}$A $l_{0.48}$As epilayers and InP substrate.d InP substrate.