풀밴드 GaAs monte carlo 시뮬레이션을 위한 최적사면체격자의 발생

Generation of a adaptive tetrahedral refinement mesh for GaAs full band monte carlo simulation

A dadaptive refinement tetrahedron mesh has been presented for using in full band GaAs monte carlo simulation. A uniform tetrahedron mesh is used without regard to energy values and energy variety in case of the past full band simulation. For the uniform tetrahedron mesh, a fine tetrahedron is demanded for keeping up accuracy of calculation in the low energy region such as .GAMMA.-valley, but calculation time is vast due to usin gthe same tetrahedron in the high energy region. The mesh of this study, thererfore, is consisted of the fine mesh in the low energy and large variable energy region and rough mesh n the high energy. The density of states (DOS) calculated with this mesh is compared with the one of the uniform mesh. The DOS of this mesh is improved th efive times or so in root mean square error and the ten times in the correlation coefficient than the one of a uniform mesh. This refinement mesh, therefore, can be used a sthe basic mesh for the full band GaAs monte carlo simulation.