Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 34D Issue 7
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- Pages.30-36
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- 1997
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- 1226-5845(pISSN)
Fabriaction of bump bounded piezoresistive silicon accelerometer
범프 본딩된 압저항 실리콘 가속도센서의 제조
Abstract
Bump bonded piezoesistive silicon accelerometer was fabricated by the porous silicon micromachining and th eprocess technique of integrated circuit. The output voltage of the accelerometer fabricated on (111)-oreiented Si substrates with n/n
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