Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 34D Issue 6
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- Pages.43-49
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- 1997
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- 1226-5845(pISSN)
A study on the dielectric characteristics improvement of gate oxide using tungsten policide
텅스텐 폴리사이드를 이용한 게이트 산화막의 절연특성 개선에 관한연구
Abstract
Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi
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