Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 34D Issue 3
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- Pages.93-104
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- 1997
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- 1226-5845(pISSN)
Simulation of Quantum transport using wigner function model
Wigner 함수 모델을 이용한 양자전송의 시뮬레이션
Abstract
Steady-state I-V characteristics of a resonant tunneling diode (RTD) is calculated by numerical analysis using quantum liouville equation based on wigner function which is derived from density operator. Modifications to the conventional discrete model are made to calculate more accurate quantum correlations. It is pointed out that we must include inelastic processes and the resistivity of the contacting layers to get a much more credible potential which can be theoretically obtained from the simple screening theory. The effects of spatially-varying effective mass is also checked briefly.
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