Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 34D Issue 3
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- Pages.52-59
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- 1997
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- 1226-5845(pISSN)
Design and fabrication of GaAs HBT ICs for 10-Gb/s optical communication system
10-Gb/s 광통신시스템을 위한 GaAs HBT IC의 설계 및 제작
Abstract
Design and performance of principal four ICs for the 10-Gb/s optical communication system are presented. AlGaAs/GaAs HBTs are basic devices to implement a laser diode driver, apre-amplifier, and a limiting amplifier, and GaInP/GaAs HBTs are used for an AGC amplifier. We fbricated 11.5-GHz LD driver, a pre-amplifier, and a limiting amplifier, an dGaInP/GaAs HBTs are used for an AGC amplifier. We fabricated LD deriver, 10.5 GHz pre amplifier, 7.2 GHz AGC amplifier, and 10.3 GHz limiting amplifier, optimized circuit design and the stabilized MMIC fabrication process.
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