Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)
- Volume 34D Issue 3
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- Pages.34-40
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- 1997
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- 1226-5845(pISSN)
Broadening of absorption spectrum in a p-type InGaAs-InAlAs coupled Quantum well
p형 InGaAs-InAlAs 결합양자우물을 이용한 흡수계수스펙트럼의 broadening
Abstract
Intervalence subband absroption of normally incident infrared radiation in p-type InGaAs-InAlAs coupled quantum well (CQW) is theoretically investigated by the multiband effective mass formalism. By solving a 4*4 luttinger-kohn hamitonian, we calculate valence subband structures, intervalence subband transition matrix elements, and absorption coefficient spectrum in the CQW which consists of a wider well, a thinner well and a barreir between them. Using the flexible design parameters given to the valence band CQW structure, we show that the absorption coefficient profile can be tailored. For a carefully designed CQW, theabsorption coefficient cn be made to maintain a large value over a wider wavelength range of incident infrared radiation compared with that shown in intersubband absorption in usual single quantum well.
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