$PLT(Pb_{1-x}La_{x})Ti_{1-x/4}O_{3}$ 타켓의 제조 및 rf-magnetron sputtering법으로 박막 형성

Fabrication of PLT target and thin film formation by rf-magnetron sputtering method

  • Jung, J.M. (Dept. of Electronic Engineering, Kyungpook National Univ.) ;
  • Cho, S.H. (Dept. of Electronic Engineering, Kyungpook National Univ.) ;
  • Park, S.G. (Dept. of Electronic Engineering, Kyungpook National Univ.) ;
  • Choi, S.Y. (Dept. of Electronic Engineering, Kyungpook National Univ.) ;
  • Kim, K.W. (Dept. of Electronic Engineering, Kyungpook National Univ.)
  • 발행 : 1997.01.31

초록

고주파 마그네트론 스펏터링법을 이용하여 La 성분비에 따른 PLT 박막을 제조하였다. 낮은 분위기압력하에서 PLT 박막은 높은 C 축 배향성을 보였다. PLT 박막의 C축 배향성은 분위기 압력과 La 성분비가 증가할수록 XRD 와 SEM 분석에서 감소함을 확인하였다. La의 성분비가 증가할수록 PLT 박막의 비유전율은 증가하였으며 잔류분극은 감소하였다.

Using a rf-magnetron sputtering method, highly c-axis oriented La modified $PbTiO_{3}$ (PLT) ferroelectric thin films with compositions of $(Pb_{1-x}La_{x})Ti_{1-x/4}O_{3}$, where x=0.05, x=0 and x=0.15, have been obtained on (100)MgO single crystal substrate under conditions of low gas pressure. The degree of c-axis orientation of PLT films decreases with increasing gas pressure and with increasing La contant. These films were characterized by X-ray diffraction and SEM. PLT thin films of x=0.05, 0.1 and 0.15 show a low dielectric constant of 218, 246 and 361 at 1 kHz and remanent polarization(Pr) of $9{\mu}C/cm^{2}$, $8{\mu}C/cm^{2}$ and $7{\mu}C/cm^{2}$.

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