자연과학논문집 (The Journal of Natural Sciences)
- 제8권2호
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- Pages.137-146
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- 1996
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- 1225-6196(pISSN)
탄화규소막의 형성에 의한 흑연소지의 내산화성 향상에 관한 연구
A Study on the Improvement of the Oxidation-Resistance of the Graphite Substrate by Forming of SiC Film on its Surface
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Cho, Sung-Jun
(Dept. of Inorganic materials Engineering, Pai Chai Univ.) ;
- Lee, Jong-Min (Dept. of Inorganic materials Engineering, Pai Chai Univ.) ;
- Kim, In-Ki (Dept. of Material Science and Engineering, Hanseo Univ.) ;
- Jang, Jeen-Suck (Industrial Technology Instute of Chung-Buck)
- 발행 : 1996.02.28
초록
Sol-Gel법에 의해 흑연소지의 표면에 SiC막을 형성해 줌으로써 내산화성을 향상시키고자 하였다. 규소(Si) 및 탄소(C)의 근원물질로는 TEOS(Tetraethyl orthosilicate)와 phenol수지를 각각 사용하였으며, TEOS sol의 농도가 SiC막의 형성에 미치는 영향을 알아 보기 위해,
To increase the oxidation-resistance of graphite substrate, we have tried to form SiC film on its surface by Sol-Gel method. TEOS(Tetraethyl orthosilicate) and phenol resin have been used as silicon(Si) and carbon(C) sources, respectively. In order to know the effect of the TEOS Sol concentration on the forming of SiC film, we have taken 5 different