LOW TEMPERATURE DEPOSITION OF SILICON OXIDE FILMS BY UV-ASSOSTED RF PLASMA-ENHANCED CVD

Silicon oxide films were prepared by using five kinds of organosilicon compound as gas sources without oxygen by rf plasma-enhanced CVD (PECVD). UV light was irradiated on a substrate vertically during deposition to enhance film oxidation and ablation of carbon contamination in a deposited films. Films prepared with UV irradiation contained less carbon than those prepared without UV irradiation. The oxidation of the films was improved by UN irradiation. The effect of UV irradiation was, however, not observed when the films were prepared with tetramethy lsilane (TMS) which contained no oxygen atom. Dissociated oxygen atoms from an organosilicon compound were excited in the plasma with UV irradiation around the substrate surface and affected the enhancement of film oxidation and ablation of carbon in the films.