Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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LOW TEMPERATURE DEPOSITION OFSIOx FILMS BY PLASMA-ENHANCED CVD USING 100 kHz GENERATOR

  • Kakinoki, Nobuyuki (Department of Materials Processing Engineering, Nagoya University) ;
  • Suzuki, Takenobu (Department of Materials Processing Engineering, Nagoya University) ;
  • Takai, Osamu (Department of Materials Processing Engineering, Nagoya University)
  • Published : 1996.12.01
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Abstract

Silicon oxide thin films are prepared by plasma-enhanced CVD (PECVD) using 100kHz and 13.56MHz generators. Source gases are two sorts of mixture, tetramethoxysilane (TMOS) and oxygen, and tetramethylsilane (TMS) and oxygen. We investigate the effect of frequency on film properties of deposited films including mechanical properties. 100kHz PECVD process can deposit silicon oxide films at $23^{\circ}C$ at the power of 20W. X-ray photoelectron spectroscopy (XPS), infrared spectroscopy (IR) and ellipsometric measurements reveal that the structural quality of the films prepared both by 100kHz process and by 13.56MHz process are very like silicon dioxide. The 100kHz process is adequate for low temperature deposition of SiOx films.

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