한국표면공학회지 (Journal of the Korean institute of surface engineering)
- 제29권5호
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- Pages.519-524
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- 1996
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
XPS STUDY ON SN-DOPED DLC FILMS PREPARED BY RF PLASMA-ENHANCED CVD
- Inoue, Y. (Department of Materials Processing Engineering, Nagoya University) ;
- Komoguchi, T. (Department of Materials Processing Engineering, Nagoya University) ;
- Nakata, H. (Department of Materials Processing Engineering, Nagoya University) ;
- Takai, O. (Department of Materials Processing Engineering, Nagoya University)
- 발행 : 1996.10.01
초록
We synthesized semiconducting Sn-doped diamondlike carbon films by rf plasma-enhanced chemical vapor deposition using an organotin compound as a dopung gas source. XPS quan-titative analysis for the deposited films after 60 s argon ion etching revealed that Sn concen-tration increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C-Su bond which had a negative chemical shift. C 1s spectra also indicated that the deposited films were relatively
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