COMPARISON OF PLASMA-INDUCED SURFACE DAMAGES IN VARIOUS PLASMA SOURCES

  • Yi, Dong-Hyen (Advanced Technology R&D Laboratories, LG Semicon Co. Ltd.) ;
  • Lee, Jun-Sik (Advanced Technology R&D Laboratories, LG Semicon Co. Ltd.) ;
  • Kim, Sang-Kyun (Advanced Technology R&D Laboratories, LG Semicon Co. Ltd.) ;
  • Kim, Jae-Jeong (Advanced Technology R&D Laboratories, LG Semicon Co. Ltd.)
  • 발행 : 1996.10.01

초록

This study was an investigation of plasma-induced damages on silicon substrate in the semiconductor manufacturing technology. The plasma-induced damage level on silicon substrate was analyzed and compared in various plasma etching systems. The analysis methods were therma wave, life-time recovery, SCA (Surface Charge Analyzer) and TRXF (Total Reflection X-ray Fluorescence) measurements, and the measured values were compared for each systems. In the comparison of the values which were obtained by a system that had low life-time recovery, there was not any differences in DC parameters. However, the reflesh time distribution of device of that system had decreased about 10 to 20m sec compared to a system which had high life-time recovery.

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