PROPOSE NEW MIXTURE TARGET FOR LOW-TEMPERATURE AND HIGH- RATE DEPOSITION OF PZT THIN FILMS BY REACTIVE SPUTTERING

  • Hata, Tomonobu (Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University) ;
  • Zhang, WeiXiao (Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University) ;
  • Sasaki, Kimihiro (Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University)
  • Published : 1996.10.01

Abstract

A rf reactive sputter deposition technique was adopted to deposit ferroelectric lead zirconate titanate (PZT) thin films with high rate from a ZrTi alloy target combined with PbO pellets. Deposition characterisitics including the effects of PbO are ratio were discussed. A new deposition mode called the quasi-metallic mode was observed. Perovskite PZT films were prepared at a growth temperature as low as$ 450^{\circ}C$. However, because the target structure is unstable, weproposed a mixture target consisted of Zr, Ti and PbO. Fundamental experiments were investigated using the powder target. Perovskite PZT film could be obtained at $450^{\circ}C$ with better electrical properties also.

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