As이온이 주입된 Si의 구조적 특성 연구

Study on Structural properties of As Ion -Implanted Si

  • 믄영희 (영남대학교 물리학과) ;
  • 배인호 (영남대학교 물리학과) ;
  • 김말문 (영남대학교 물리학과) ;
  • 한병국 (경산대학교 물리학과) ;
  • 김창수 (한국표준과학연구원 소재특성평가센터) ;
  • 홍승수 (한국표준과학연구원 압력진공그룹) ;
  • 신용현 (한국표준과학연구원 압력진공그룹) ;
  • 정광화 (한국표준과학연구원 압력진공그룹)
  • 발행 : 1996.09.01

초록

STrained layers and strain depth profile of high dose As ion implanted (100) si wafer annealed at various temperatures have been investigated by means of X-ray double crystal diffractometry (X-ray DCD). The results obtained by x-ray rocking curve analysis showed a defect layer at the original amorphous /crystalline interface of 1400$\AA$ depth. In addition arsenic ion concentrtion profiles and defect distributions in depth were obtained by the SIMS and TRIM -code simulation . the positive strain depth profile determined from the rocking curve analysis were only presented under 0.14 $\mu$m from the surface for samples ananelaed at $600^{\circ}C$. The results was shown that the thickness of amprphous layer is 0.14 $\mu$m indirectry, and it was good agreement with the TRIM -Code simulation. Additionally, it could be thought that the positive strain have been affected residual intersitial atoms under the amorphous/crystalline interface formed by ion implantation.

키워드

참고문헌

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