Preparation of $Ba_{1-x}Sr_xTiO_3$thin films by metal by metal-organic chemical vapor deposition and electrical properties.

Preparation of $Ba_{1-x}Sr_xTiO_3$ thin films by metal-organic chemical vapor deposition and electrical properties

  • Yoon, Jong-Guk (Department of Materials Engineering, College of Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Ceramic Science & Engineering) ;
  • Lee, Won-Jae (Korea Advanced Institute of Science and Technology) ;
  • Kim, Ho-Gi
  • Published : 1996.03.01

Abstract

$(Ba_{1-x}Sr_xTiO_3$ (BST) thin films have been grown on Pt-coated MgO by metal -organic chemical vapor deposition. X-ray diffraction results showed that BST films were grown on a Pt/MgO substrate with (100) preferred orientation perpendicular to the surface. The lineawr relationship of P-E curve obtained form hysteresis loop measurement indicated that the BST films had a Curie transitions below room temperature . Films deposited at $900^{\circ}C$ exhibited a smooth and dense microstructure, a dielectric constant of 202, and a dissipation facotr of 0.02 at 100kHz. The leakage current density of the BST films is about $2\times10^{-10} \;A/\textrm{cm}^2$$ at an applied electric field of 0.2 MV/cm. The electrical behavior on the current-voltage characteristics is well explained by the bulk-limited Pool-Frenkel emission.

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References

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