Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Characterization of Zn Doping in AIGaInP Epitaxy Layer Grown by MOCVD

유기금속 화학증착법을 사용한 AIGAInP층의 Zn 도우핑 농도의 특성

  • Published : 1996.09.01
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Abstract

저압 유기금속 화학증착법을 사용하여 AIGaInP층의 diethylzinc의 III족 원소(AO, Ga, In)에 대한 비와 성장온도 변화에 따른 Zn(acceptor)의 첨가 농도특성을 연구하였다. Diethylzinc의 III족 원소(AI, Ga, In)비를 0.4에서 2.0까지 변화시켜 본 결과 0.85일 때 가장 높은 acceptor 농도를 가졌으며, 성장온도를 69$0^{\circ}C$에서 80$0^{\circ}C$까지 변화시킨 결과 성장온도에 대한 변화는 69$0^{\circ}C$-73$0^{\circ}C$일 때 온도가 증가함에 따라 acceptor농도는 커졌으며, 그 이상에서는 감소하였다. 또한, 성장속도가 빠를수록 높은 acceptor 농도를 가지게 되어 3.3$\mu\textrm{m}$/hr의 성장속도일 때 8x1017/㎤의 가장 높은 acceptor 농도를 얻을수 있다.

Keywords

References

  1. Jpn.J.Appl.Phys v.21 no.L731 MOCVD-grown AlGaInP double heterostructure lasers optically pumped at 90 T.Suzuki.;I.Hino.;A.Gomyo.;K.Nishida
  2. J.Cryst.growth v.68 MOCVD growth of (AlGa)InP and double heterostructures for visible light lasers I.Hino.;T.Suzuki
  3. Electorn.Lett v.21 no.20 Room-temperaturecw operation of an AlGaInP double-heterostructure visible lasers K.Kobayashi.;S.Kawata.;A.Gomyo.;I.Hino.;T.Suzuki
  4. Appl.Phys.Lett v.48 Room-temperature CW operation of InGaP/InGaAlP visible laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition M.Ishikawa.;Y.Ohba.;H.Sgawara.;M.Yamamoto.;T.Nakanishi
  5. Appl.Phys.Lett v.47 Room-temperature continuous-wave operation of an AlGaInP double heterostructure laser grown by atmospheric metalorganic chemical vapor deposition M.Ikeda.;Y.Mori.;H.Sato.;K.Kaneko.;N.Watanabe
  6. Trans.IECE Japan v.E69 Room-tempereture CW operation of transverse mode stabilized InGaAlP visible light laser diodes M.Ishigawa.;Y.Ohba.;Y.Watanabe.;H.Sugawara.;M.Yamamoto.;G.Hatakoshi
  7. Abst.18th Conf. Solid State Dev InGaAlP transverse mode stabilized visible laser diodes fabricated by MOCBD selective growth M.Ishigawa.;Y.Ohba.;Y.Watanabe.;H.Nagasaka.;H.Sugawara.;M.Yamamoto.;G.Hatakoshi
  8. Appl.Phys.Lett Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch stop layer R.Tanaka.;S.Minagawa.;t.Gajimura
  9. SPIE proc v.1219 670nm transverse-mode stabilized InGaAlP laser diodes Y.Uematsu.;G.Hatakoshi.;M.Ishikawa.;M.Okajima
  10. 10th IEEE Int. Semiconductor Laser Conf Low threshold current InGaP/InAlP transverse mode stabilized lasers M.Ishigawa.;Y.Ohba.;Y.Watanabe.;H.Nagasaka.;H.Sugawara.;M.Yamamoto.;g.Hatakoshi
  11. Electron.Lett. v.23 Very low threshold current denisity of a GaInP/AlGaInP double heterostructure laser grown by MOCVD K.Nakano.;M.Ikeda.;A.Doda.;c.Kojima
  12. Electron.Lett v.24 High temperature CW operation of visible light-emitting GaInP/AlGaInP inner stripe laser diodes H.Shiozawa.;H.Okuda.;M.Ishkawa.;G.Hatakoshi.;Y.Uematsu
  13. 22nd. Conf. Solid State Dev High temperature operation of index-guided AlGaInP semiconductor lasers T.Tanaka.;A.Ooishit.;t.Kajumura.;S.Minagawa
  14. Appl.Phys.Lett v.53 Effect of facet coating on the reliability of InGaAlP visible light laser diode K.Itaya.;M.Ishikawa.;H.Okuda.;Y.Watanabe.;K.Nitta.;H.Shiozawa.;Y.uematsu
  15. IEEE J. Quantum Electron v.35 Highly reliable InGaP/InGaAlP visible light emitting inner stripe lasers with 667nm lasing wavelenth H.Okuda.;M.Ishikawa.;H.Shiozawa.;Y.Watanabe.;K.Itaya.;K.Nitta.;G.Hatakoshi.;Y.Kokubun.;Y.Uematsu
  16. Jpn.Appl.Phys v.31 High power InGaAlP laser diode for high density optical recording G.Hatakoshi.;K.Nitta.;K.Itaya.;Y.Nishikawa.;M.Ishikawa.;M.Okajima
  17. Eletrn.Lett v.28 Activation of Zn acceptors in AlGaInP eptiaxial layers grown on misoriented substrates by metal oraganic chemical vapor deposition H.Hamada.;S.Honda.;R.Hiroyama.;K.Yodoshi.;T.Yamaguchi
  18. J.Cryst.Growth v.113 Effects of substarte misorientation on doping characteristics and bandgap energy for InGaAlP crystals grown by metaloganic chemical vapor deposition M.Suzuki.;Y.Nishigawa.;M.Ishikawa.;Y.Kokubun
  19. IEEE J.Quantun Elec v.27 Short wavelength InGaAlP laser diodes for high density optical recording G.Hatakoshi.;K.Itaya.;M.Ishigawa.;M.Okajima.;Y.Uematsu.;
  20. Jpn.Appl.Phys v.31 High-power InGaAlP laser diodes for high density optical recording g.Hatakoshi.;K.Nitta.;K.Itaya.;Y,.Nishikawa.;M.Ishigawa.;M.Okajima
  21. Appl.Phys.Lett v.53 Zu doping characteristics for InGaAlP grown by lowpressure metaloganic chemical vapor deposition U.Nishikawa.;Y.Tsuburail.;C.Nozaki.;Y.Ohba.;Y.Kokubun
  22. J.Cryst.Growth v.93 Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD C.Nozaki.;Y.Ohba.;H.Sugawara.;S.Yasuami.;T.Nakashini
  23. J.Cryst.Growth v.112 Anomalous dependence of In incorporation on substrate temperature into Zn doped MOCVD Y.Nishikawa.;M.Ishigawa.;H.Sugawara.;g.Hatakoshi.;Y.Kokubun
  24. J.Cryst.Growth v.108 Effects of Ⅴ/Ⅲ ratio on Zn electrical activity in Zn doped InGaAlP grown by metaloganic chemical vapor deposition Y.Nishigawa.;H.Sugawara.;M.Ishikawa.;Y.Kokubun
  25. Institute of Physics Conf v.33b S.B.Bass.;P.E.Oliver
  26. J.Cryst.Growth v.109 Effects of growth rate on properties of GaInP grown by organometallic vapor phase epitaxy D.S.CaO.;E.H.Reihlen.;G.S.Chen.;A.W.Kimball.;G.B.Stringfellow