한국세라믹학회지 (Journal of the Korean Ceramic Society)

  • 제33권2호
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  • Pages.177-182
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  • 1996
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  • 1229-7801(pISSN)
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  • 2234-0491(eISSN)
한국세라믹학회 (The Korean Ceramic Society)
권호 표지

PE-MOCVD에 의한 $SrTiO_3$ 박막의 제조 및 전기적 특성에 관한 평가

Preparation and Electrical Properties of $SrTiO_3$ Thin Films by Plasma Enhanced Metal Organic Chemical vapor Deposition

  • 발행 : 1996.02.01
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초록

strontium titanate (SrTiO3) thin films deposited on Pt/MgO were prepared by Plasma Enhanced Metal Orgainc Chemical vapor Deposition (Pe-MOCVD). The crystallinity of SrTiO3 thin films increased with increasing depo-sition temperature and SrF2 second phase disappeared at 55$0^{\circ}C$ The films showed a dielectric constant of 177 and a dissipation factor of 0.0195 at 100 kHz. The variation of capacitance of the films with applied voltage was small showing paraelectric properties. The charge storage density and leakage current density were 40fC/${\mu}{\textrm}{m}$2 and 3.49$\times$10-7 A/cm2 at 0.25 MV/cm, respectively.

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참고문헌

  1. Ferroelectrics v.116 no.215 A High Performance Piezoelectric Cable C.V. Paz;de Araujo;G.W. Talyor
  2. proc. IEEE v.77 no.3 Memory Cell and Technology Issueds for 64 and 256 Mbit One-Transistor Cell MOS DRAMs Al F. Tasch;H. Parker
  3. IEEE CIRCUITS AND DEVICES MAGAZINE Ferroelectric Materials For 64 Mb and 256 Mb DRAMs Laureen H. Parker;Al F. Tasch
  4. Jpn. J. Appl. Phys. v.30 no.9B Metalorganic Chemical Vapor Deposition of BaTiO₃Films on MgO(100) H. Nakazawa;H. Yamane;T. Harai
  5. J. Appl. Phys. v.70 no.382 Quantitative Measurement of Spacecharge Effects in Lead Zirconate-titanate Memories J.F. Scott;C.A. Araujo;B.M. Melnick;L.D. Mcmillan;R. Zuleeg
  6. IBM. J. Res. Develop. RF Sputtered Strontium Titanate Films W.B. Pennebaker
  7. Jpn. J. Appl. Phys. v.30 no.9B SrTiO₃Thin Film Preparation by Ion Beam Sputtering and Its Dielectric Properties S. Yamamichi;T. Sakuma
  8. J. Appl. Phys. v.25 Characterization of SrTiO₃Thin Films Prepared by RF Magnetron Sputtering Seung Hee Nam;Neung Ho Cho;Ho Gi Kim
  9. Jpn. J. Appl. Phys. v.31;1 no.9B Epitaxial Growth of SiTiO₃Films on Pt Electrodes and Their Electrical Properties Kazuhide Abe;Shuichi Komatsu
  10. Appl. Phys. Lett. v.53 no.18 Organometallic Chemical Vapor Deposition of High Tc Superconducting Films using a Volatile Fluorocarbon-based Precursor Jing Zhao
  11. Appl. Phys. Lett. v.60 no.1 Epitaxial growth of BaTiO₃Thin Films by Organo-metallic Chemical Vapor Deposition L.A. Wills;B.W. Wessels
  12. J. Mater. Res. v.9 no.4 Effects of Dopants in PZT Films J.F. Chang;S.B. Desu
  13. Jpn. J. Appl. Phys. v.33 no.5297 Epitaxial Growth and Dielectric Properties of $(Ba_{0.24},Sr_{0.76})TiO_3$Thin Film K. Abe;S. Komatsu
  14. Physics of Semiconductor Devices S.M. Sze
  15. Integrated Ferroelectrics v.7 Leakage and Interface Engineering in Titanate Thin Films for Non-Volatile Ferroelectric Memory and ULSI Drams X. Chen;A.I. Kingon(et al.)