The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
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Effects of Substrate Temperature and the $O_2$/Ar Ratio on the Characteristics of RF Magnetron Sputtered $RuO_2$ Thin Films

  • Published : 1996.03.01
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Abstract

$RuO_2$ thin films deposited directly on Si substrate by RF magnetron sputtering method using $RuO_2$ target have been investigated. Special interest was focused on the effect of process parameter on the surface roughness of $RuO_2$ films. Crystallization behavior and electrical properties of the films deposited at $300^{\circ}C$ were superior to those deposited at room temperature. Metallic Ru phase was formed in pure Ar and this phase had resulted poor adhesion after post annealing process in oxidizing ambient. Microstructural analysis reveals that the size of the $RuO_2$ crystallites gets smaller and the surface becomes smoother as the $O_2$ partial pressure or film thickness decreases. Irrespective of the $O_2/Ar$ ratio, resistivity of $RuO_2$ films ranged in $50~70 {\mu}{\Omega}-cm$. As the film thickness decreases, there is a thickness where the resistivity rises abruptly. Such an onset thickness turned out to be dependent n the $O_2$/Ar ratio.

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References

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