전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제33A권11호
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- Pages.112-119
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- 1996
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- 1016-135X(pISSN)
Full 밴드 몬테칼로 시뮬레이션을 이용한 GaAs 임팩트이온화에 관한 연구
Impact ionization for GaAs using full band monte carlo simulation
초록
Impact ionization model in GaAs has been presented by modified keldysh formula with two sets of power exponent of 7.8 and 5.6 in study. Impact ionization rate is derived from fermil's golden rule and ful lenergy band stucture based on empirical pseudopotential method. Impact ionization rates show anisotropic property in low energy region (<3eV), but isotropic in high energy region (3>eV). Full band monte calo simulator is coded for investigating the validity of the GaAs impact ionization model, and validity is checked by comparing impact ionization coefficients with experimental values and ones in anisotropic model. Valley transitions to energy alteration are explained by investigating electron motion in brillouin zone for full band model to electric field variation.
키워드