Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 33A Issue 7
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- Pages.185-197
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- 1996
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- 1016-135X(pISSN)
The operating characteristics of strain-compensated 1.3$\mu$ m GaInAsP/InP uncooled-LD with the structure of multiple quantum well and separate confinement heterostructure layers
응력완화 1.3$\mu$ m GaInAsP/InP uncooled-LD의 다중양자우물층과 SCH층 구조에 따른 동작 특성
Abstract
We have adopted the strain compensated PBH(planar buried heterostructure) - LD in which the MQW active layer consisted of 1.4% compressively strained GainAsP (E
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