Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 33A Issue 7
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- Pages.162-170
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- 1996
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- 1016-135X(pISSN)
Prediction of gate oxide breakdwon under constant current stresses
정전류 스트레스 하에서 게이트 산화막의 항복 특성 예측
Abstract
A breakdown model of gate oxides under constant current stresses is proposed. This model directly relates the oxide lifetime to the stress current density, and includes statistical nature of oxide breakdown using the concept of "effective oxide thinning". It is shown tha this model can reliably predict the TDDB characteristics for any current stress levels and oxide areas.
Keywords