전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제33A권7호
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- Pages.149-155
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- 1996
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- 1016-135X(pISSN)
양질의 FRO(fully recessed oxide)의 선택적 형성
A selective formation of high-quality fully recessed oxide
초록
A new technique wasdeveloped which obtains selectively the htick fully recessed oxidized porous silicon layer (OPSL) with good dielectric property. The porous silicon layer was ocnverted to thick fully recessed oxide (FRO) with 3-step (1
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