전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제33A권6호
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- Pages.151-157
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- 1996
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- 1016-135X(pISSN)
SEPOX (selective poly oxidation) process에서 Si-buffer layer에 발생하는 pinhole 현상에 대한 연구
Si-buffer pinholes in the SEPOX (selective poly oxidation) process
초록
We propose a mechanism for the formation of pinholes in the Si-buffer layer, through the observations with varying the process- and structure variables in the SEPOX (selective poly-oxidation) process, an isolation method for sub-u DRAMs. Pinholes are formed through the accumulation of Si vacancies generated by the oxidation of Si, in which Si atoms leave the sites (vacancies) at the Si/SiO
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