Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 33A Issue 5
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- Pages.117-124
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- 1996
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- 1016-135X(pISSN)
Fabrication of $\mu$ c-Si:H TFTs by PECVD
PECVD에 의한 $\mu$ c-Si:H 박막트랜지스터의 제조
Abstract
The .mu.c-Si:H films have been deposited by PeCVD at the various conditions such as hydrogen dilution ratio, substrate temperature and RF power density. Then, we studied their electrical and optical properties. Top gate hydrogenated micro-crystalline silicon thin film transistors(
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