Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 33A Issue 5
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- Pages.102-107
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- 1996
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- 1016-135X(pISSN)
Properties of metal-ferroelectric thin film-silicon(MFS) structure using BaMgF$_{4}$
BaMgF$_{4}$ 를 이용한 금속-강유전체박막-실리콘(MFS) 구조의 특성
Abstract
Use of a rapid thermal annealing (RTA) technique is shown to improve the properties of metal-ferroelectric BaMgF
Keywords