전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제33A권4호
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- Pages.129-135
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- 1996
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- 1016-135X(pISSN)
Deep submicrometer PMOSFET의 hot carrier 현상과 소자 노쇠화
Hot carrier effects and device degradation in deep submicrometer PMOSFET
초록
In this paper, the hot carrier effect and device degradation of deep submicrometer SC-PMOSFETs have been measured and characterized. It has been shown that the substrate current of a 0.15
키워드