대한전기학회논문지 (The Transactions of the Korean Institute of Electrical Engineers)
- 제45권2호
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- Pages.249-255
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- 1996
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- 0254-4172(pISSN)
자기정렬된 낮은 농도의 소오스를 갖는 트렌치 바디 구조의 IGBT
A Self-Aligned Trench Body IGBT Structure with Low Concentrated Source
초록
A self-aligned latch-up suppressed IGBT has been proposed and the process method and the device characteristics of the IGBT have been verified by numerical simulation. As the source is laterally diffused through the sidewall of the trench in the middle of the body, the size of the source is small and the doping concentration of the source is lower than that of the p++ body and the emitter efficiency of the parasitic npn transistor is low so that latch-up may be suppressed. No additional mask steps for p++ region, source, and source contact are required so that small sized body can be obtained Latch-u current density higher than 10000 A/cm