센서학회지 (Journal of Sensor Science and Technology)
- 제5권3호
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- Pages.87-92
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- 1996
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
c-축 배양된 PLT 박막의 특성 및 IR센서 응용
Characteristics of c-axis oriented PLT thin films and their application to IR sensor
- Choi, B.J. (Dept. of Electronic Eng., Kyungpook National University) ;
- Park, J.H. (Dept. of Electronic Eng., Kyungpook National University) ;
- Kim, Y.J. (Dept. of Electronic Eng., Kyungpook National University) ;
- Kim, K.W. (Dept. of Electronic Eng., Kyungpook National University)
- 발행 : 1996.05.31
초록
Pb과잉인 PLT 타겟을 이용하여 MgO(100) 단결정 기판위에 고주파 마그네트론 스펏터링법으로 PLT박막을 제조하였으며, c-축 배향에 따른 물리적 및 전기적 특성을 조사하였다. PLT박막의 c-축 배향성은 제조조건에 따라 변화하며, 본 연구에서의 제조조건은 기판온도가
The PLT thin films on (100) cleaved MgO single crystal substrate have been fabricated by rf magnetron sputtering using a PbO-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of
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