Journal of Sensor Science and Technology (센서학회지)
- Volume 5 Issue 3
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- Pages.87-92
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- 1996
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Characteristics of c-axis oriented PLT thin films and their application to IR sensor
c-축 배양된 PLT 박막의 특성 및 IR센서 응용
- Choi, B.J. (Dept. of Electronic Eng., Kyungpook National University) ;
- Park, J.H. (Dept. of Electronic Eng., Kyungpook National University) ;
- Kim, Y.J. (Dept. of Electronic Eng., Kyungpook National University) ;
- Kim, K.W. (Dept. of Electronic Eng., Kyungpook National University)
- Published : 1996.05.31
Abstract
The PLT thin films on (100) cleaved MgO single crystal substrate have been fabricated by rf magnetron sputtering using a PbO-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of
Pb과잉인 PLT 타겟을 이용하여 MgO(100) 단결정 기판위에 고주파 마그네트론 스펏터링법으로 PLT박막을 제조하였으며, c-축 배향에 따른 물리적 및 전기적 특성을 조사하였다. PLT박막의 c-축 배향성은 제조조건에 따라 변화하며, 본 연구에서의 제조조건은 기판온도가
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