Journal of Sensor Science and Technology (센서학회지)
- Volume 5 Issue 2
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- Pages.55-60
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- 1996
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
OMVPE and Plasma-Assisted Doping of ZnSe with Dimethlzinc:triethylamine Adduct Source
- Huh, Jeung-Soo (Department of Metallurgical Engineering, Kyungpook National University) ;
- Lim, Jeong-Ok (Sensor Technology Research Center(STRC), Kyungpook National University)
- Published : 1996.03.30
Abstract
The growth and microwave plasma assisted nitrogen doping of ZnSe by low pressure organometallic vapor phase epitaxy(OMVPE) has been investigated in a vertical downflow reactor equipped with a laser interferometer for in-situ growth rate measurements. Particular emphasis is placed on understanding growth characteristics of
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