Journal of Sensor Science and Technology (센서학회지)
- Volume 5 Issue 5
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- Pages.21-29
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- 1996
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Fabrication of Piezoresistive Silicon Acceleration Sensor Using Selectively Porous Silicon Etching Method
선택적인 다공질 실리콘 에칭법을 이용한 압저항형 실리콘 가속도센서의 제조
- Sim, Jun-Hwan (School of Electronic & Electrical Eng., Kyungpook Nat'l Univ.) ;
- Kim, Dong-Ki (School of Electronic & Electrical Eng., Kyungpook Nat'l Univ.) ;
- Cho, Chan-Seob (Dept. of Electronic & Electrical Eng., Sangju Nat'l Polytech. Univ.) ;
- Tae, Heung-Sik (School of Electronic & Electrical Eng., Kyungpook Nat'l Univ.) ;
- Hahm, Sung-Ho (School of Electronic & Electrical Eng., Kyungpook Nat'l Univ.) ;
- Lee, Jong-Hyun (School of Electronic & Electrical Eng., Kyungpook Nat'l Univ.)
- 심준환 (경북대학교 전자.전기공학부) ;
- 김동기 (경북대학교 전자.전기공학부) ;
- 조찬섭 (국립상주대학교 전자.전기공학과) ;
- 태흥식 (경북대학교 전자.전기공학부) ;
- 함성호 (경북대학교 전자.전기공학부) ;
- 이종현 (경북대학교 전자.전기공학부)
- Published : 1996.09.30
Abstract
A piezoresistive silicon acceleration sensor with 8 beams, utilized by an unique silicon micromachining technique using porous silicon etching method which was fabricated on the selectively diffused (111)-oriented
(111),
Keywords