Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A new drian-current model kof GaAs MESFET

GaAs MESFET의 새로운 드레인 전류 모델

  • 조영송 (초당산업대학교 정보통신공학과) ;
  • 신철재 (아주대학교 정보전자공학과)
  • Published : 1995.08.01
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Abstract

A new DC drain-current model of GaAs MESFET with improved accuracy is proposed in this paper. The proposed model includes the decrease of current slope according to gate voltages. It is possible to represent a transconductance compression using the proposed model. It shows improved transconductance and output resistance in accuracy from the forward biased gate region to near the cutoff region. The wquaer error of saturation current is decreased by 46% compared with Statz model. The proposed model can be useful for the simulation of large-signal operation and harmonic distortion.

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