전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제32A권7호
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- Pages.77-84
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- 1995
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- 1016-135X(pISSN)
Sol-Gel 법으로 제작된 PZT 박막의 전기적 성질에 조성과 하부전극이 미치는 영향
The effects of the composition and the lower electrode on the properties of PZT thin films prepared by Sol-Gel method
초록
We studied the effects of the Zr/Ti ration and the bottom electrode (Pt or ITO) on the electrical properties of PZT thin films prepared by sol-gel method. Their permittivities and tagent losses with the variation of frequencies were measured by the LCR meter and their maximum polarizations, remanent polarizations, and coercive fields were obtained from the hysteresis loops measured by the Sawyer-Tower circuit. For the PZT thin film of the Zr/Ti ration of 53/47, permittivity at 10kHz, coercive field, maximum and remanent polarizations ere measured as 952, 20.7kV/cm, 10.43
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