전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제32A권7호
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- Pages.51-57
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- 1995
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- 1016-135X(pISSN)
AlIanAs/GaInAS계 공명터널링 다이오드의 부성저항 특성에 관한 수치 해석
Numerical Analysis of NDR characteristics in resonant tunneling diodes with AllnAs/GaInAs Structure
초록
The theoretical analysis for AlInAs/GaInAs resonant tunneling diodes (RTDs), which have shown the improved negative differential resistance (NDR) characteristics, has scarcely been made in comparison with AlGaAS/GaAs RTDs. In this paper, the static current-voltage relation of Al
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