전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제32A권1호
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- Pages.111-118
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- 1995
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- 1016-135X(pISSN)
Non-reachthrough 평면 접합의 항복전압에 대한 3 차원 효과의 해석
Analysis of the Three-Dimentional Effects on the Breakdown Voltage in Non-reachthrough Planar Junctions
초록
The three-dimentional effects on the breakdown voltage of non-reachthrough planar junctions which have the finite lateral radius of window curvature are analytically investigated. The critical electric fields at breakdown and the breakdown voltages are expressed successfully in a form which is normalized to the parallel plane case. The analytical results are in excellent agreement with the published results of experiment and the quasi-three-dimensional device simulation by MEDICI for non-reachthrough plane junctions having different background doping and junction depth. The results may be applicable to the estimations of breakdown voltages in many practical power devices.
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