Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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ECR-PECVD PZT Thin Films for the Charge Storage Cpacitor of ULSI DRAMs

ECR-PECVD법을 사용한 ULSI DRAM 용 PZT 박막 제조

  • 김재환 (한국과학기술원 재료공학과) ;
  • 신중식 (한국과학기술원 재료공학과) ;
  • 김성태 (한국과학기술원 재료공학과) ;
  • 노광수 (한국과학기술원 재료공학과) ;
  • 위당문 (한국과학기술원 재료공학과) ;
  • 이원종 (한국과학기술원 재료공학과)
  • Published : 1995.02.01
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Abstract

PZT thin films were fabricated on Pt/Ti/SiO2/Si substrates at $500^{\circ}C$ by ECR-PECVD for the application to the charge storage capacitor of ULSI DRAMs. Perovskite single phase PZT films were obtained by controling the film compositional ratio Pb/(Zr+Ti) close to 1. The anion concentrations in the PZT films were successfully controlled by adjusting the flow rates of each MO sources. Capacitance of a typical 94 nm thick PZT film prepared at $500^{\circ}C$ in this work was about 5.3 uF/$\textrm{cm}^2$, which corresponds to the equivalent SiO2 thickness of 0.65nm.

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